Deep-level study of Ga(In)P(NAs) alloys grown on Si substrates. (August 2016)

• Record Type: Journal Article
• Authors: Baranov, A I; Kleider, J P; Gudovskikh, A S; Darga, A; Nikitina, E V; Egorov, A Yu
• Is Part Of: Journal of physics. Volume 741(2016)
• Publication Date: 2016-08
• Subjects: Physics -- Congresses; 530.5
• DOI: 10.1088/1742-6596/741/1/012077
• Languages: English
• ISSNs: 1742-6588

Abstract

Abstract: Defect properties of Ga(In)P(NAs) layers with different composition were studied by admittance spectroscopy. For nitrogen content layers the defect level with energy of 0.44-0.47 eV, which related to nitrogen incorporation into GaP, was observed. Its concentration is lower for GaPNAs layers compared to GaPN/InP due to better compensation by arsenic than by indium in lattice of GaP. Other defect level with energy of 0.30 eV was detected in GaPAs and GaPN/InP layers. Likely, the both observed defects in GaPAs and GaPN/InP have the same nature.