GaP/Si anisotype heterojunction solar cells. (August 2016)

• Record Type: Journal Article
• Authors: Zelentsov, K S; Gudovskikh, A S
• Is Part Of: Journal of physics. Volume 741(2016)
• Publication Date: 2016-08
• Subjects: Physics -- Congresses; 530.5
• DOI: 10.1088/1742-6596/741/1/012096
• Languages: English
• ISSNs: 1742-6588

Abstract

Abstract: Multijunction solar cells grown on Si substrates using III-V compounds are very promising due to potentially high efficiency (over 40%). In that case homojunction in silicon can be replaced with GaP heterojunctions which can be more effective in terms of lowering surface recombination. Silicon substrates of both n- and p-type doping were used to form GaP/Si anisotype heterostructures. It was demonstrated that for p-GaP/n-Si structures charge carrier transport is mainly blocked due to large value of valence band offset at the heterointerface. For n-GaP/p-Si solar cells optimal thickness and doping level were calculated using AFORS-HET software. The influence of interface states density and GaP layer parameters was investigated.