Effect of a boron implantation on the electrical properties of epitaxial HgCdTe with different material composition. (August 2016)

• Record Type: Journal Article
• Authors: Lyapunov, D V; Pishchagin, A A; Grigoryev, D V; Korotaev, A G; Voitsekhovskii, A V; Kokhanenko, A P; Iznin, I I; Savytskyy, H V; Bonchik, A U; Dvoretskii, S A; Mikhailov, N N
• Is Part Of: Journal of physics. Volume 741(2016)
• Publication Date: 2016-08
• Subjects: Physics -- Congresses; 530.5
• DOI: 10.1088/1742-6596/741/1/012097
• Languages: English
• ISSNs: 1742-6588

Abstract

Abstract: In this work the experimental results of investigations of the dynamics of accumulation and spatial distribution of electrically active radiation defects when irradiating epitaxial films of Hg1-x Cdx Te (MCT) with different material composition (x). The films, grown by molecular beam epitaxy (MBE) were irradiated by B ions at room temperature in the radiation dose range 10 12 -10 15 ions/cm 2 and with ion energy 100 keV. The results give the differences in implantation profiles, damage accumulation and electrical properties as a function of the material composition of the films.