InGaN/GaN heterostructures with lateral confinement for light emitting diodes. (August 2016)

• Record Type: Journal Article
• Authors: Kotlyar, K P; Soshnikov, B I; Morozov, I A; Kudryashov, D A; Zelentsov, K S; Lysak, V V; Soshnikov, I P
• Is Part Of: Journal of physics. Volume 741(2016)
• Publication Date: 2016-08
• Subjects: Physics -- Congresses; 530.5
• DOI: 10.1088/1742-6596/741/1/012083
• Languages: English
• ISSNs: 1742-6588

Abstract

Abstract: InGaN/GaN nanorod structure for light emission diode fabricated by the reactive plasma etching through the self-assembled Ni nano-cluster mask is presented. Fabricated array structure, presented in the form of truncated cones with average diameter height and period of nanorods is 250±50 nm, 430nm and 650±50 nm, respectively. The side angle of single structure about 80 o . EL spectrum has maximum at 460 nm.