Evaluation of the influence mode on the CVC GaN HEMT using numerical modeling. (August 2016)

• Record Type: Journal Article
• Authors: Parnes, Ya M; Tikhomirov, V G; Petrov, V A; Gudkov, A G; Marzhanovskiy, I N; Kukhareva, E S; Vyuginov, V N; Volkov, V V; Zybin, A A
• Is Part Of: Journal of physics. Volume 741(2016)
• Publication Date: 2016-08
• Subjects: Physics -- Congresses; 530.5
• DOI: 10.1088/1742-6596/741/1/012024
• Languages: English
• ISSNs: 1742-6588

Abstract

Abstract: Done numerically simulated the effects of certain modes of operation on the CVC of field microwave transistors on the basis of heterostructures AlGaN / GaN (HEMT). The results of these studies suggest the possibility of quite efficient use of numerical simulation for the development of HEMT microwave transistors allowing for the real instrument designs.