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HARVARD Citation
Suria, A. et al. (n.d.). DC characteristics of ALD-grown Al2O3/AlGaN/GaN MIS-HEMTs and HEMTs at 600 °C in air. Semiconductor science and technology. p. . [Online].
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Suria, A. et al. (n.d.). DC characteristics of ALD-grown Al2O3/AlGaN/GaN MIS-HEMTs and HEMTs at 600 °C in air. Semiconductor science and technology. p. . [Online].