Influence of chemical potential on shape evolution of 2D-MoS2 flakes produced by chemical vapor deposition. (26th October 2020)
- Record Type:
- Journal Article
- Title:
- Influence of chemical potential on shape evolution of 2D-MoS2 flakes produced by chemical vapor deposition. (26th October 2020)
- Main Title:
- Influence of chemical potential on shape evolution of 2D-MoS2 flakes produced by chemical vapor deposition
- Authors:
- Raju, Mula
Wan, Meher
Sen, Supriti
Jacob, Chacko - Abstract:
- Abstract: High-quality, ultrathin 2D-MoS2 layers with large area were grown on SiO2 /Si substrates by using atmospheric pressure chemical vapor deposition (APCVD) at elevated temperatures. The growth precursors (MoO3 and S) were placed separately inside the double-zone furnace to control the growth parameters individually for better flexibility in the growth process. In this study, it was found that the shape and edge structure of the evolved MoS2 flakes were significantly influenced by the chemical potential of the Mo and S precursor concentration. In keeping with the concentration gradient of the Mo precursor (MoO3 ) on the substrate surface, the shape of MoS2 flakes changed from hexagonal to truncated triangle and then to triangular shapes, owing to the Mo-rich to S-rich conditions. The surface roughness and thickness of the differently shaped MoS2 flakes were studied by using atomic force microscope (AFM). Additionally, Raman and photoluminescence (PL) techniques were employed to characterize the crystalline quality, number of grown layers and optical performance of the as-grown MoS2 layers. Auger electron spectroscopy (AES) analysis and scanning electron microscopy (SEM) confirmed that the equilibrium crystal shape of the MoS2 was hexagonal under Mo-rich conditions. However, the shape of the MoS2 crystal changed to a triangle under S-rich conditions. Furthermore, the influence of chemical potential on the edge structure of the monolayer MoS2 and its effect on theAbstract: High-quality, ultrathin 2D-MoS2 layers with large area were grown on SiO2 /Si substrates by using atmospheric pressure chemical vapor deposition (APCVD) at elevated temperatures. The growth precursors (MoO3 and S) were placed separately inside the double-zone furnace to control the growth parameters individually for better flexibility in the growth process. In this study, it was found that the shape and edge structure of the evolved MoS2 flakes were significantly influenced by the chemical potential of the Mo and S precursor concentration. In keeping with the concentration gradient of the Mo precursor (MoO3 ) on the substrate surface, the shape of MoS2 flakes changed from hexagonal to truncated triangle and then to triangular shapes, owing to the Mo-rich to S-rich conditions. The surface roughness and thickness of the differently shaped MoS2 flakes were studied by using atomic force microscope (AFM). Additionally, Raman and photoluminescence (PL) techniques were employed to characterize the crystalline quality, number of grown layers and optical performance of the as-grown MoS2 layers. Auger electron spectroscopy (AES) analysis and scanning electron microscopy (SEM) confirmed that the equilibrium crystal shape of the MoS2 was hexagonal under Mo-rich conditions. However, the shape of the MoS2 crystal changed to a triangle under S-rich conditions. Furthermore, the influence of chemical potential on the edge structure of the monolayer MoS2 and its effect on the equilibrium shape of the crystal were studied. … (more)
- Is Part Of:
- Nanotechnology. Volume 32:Number 4(2021)
- Journal:
- Nanotechnology
- Issue:
- Volume 32:Number 4(2021)
- Issue Display:
- Volume 32, Issue 4 (2021)
- Year:
- 2021
- Volume:
- 32
- Issue:
- 4
- Issue Sort Value:
- 2021-0032-0004-0000
- Page Start:
- Page End:
- Publication Date:
- 2020-10-26
- Subjects:
- 2D-MoS2 layers -- chemical vapor deposition -- edge structure -- equilibrium shape -- chemical potential
Nanotechnology -- Periodicals
Nanotechnology -- Periodicals
Nanotechnology
Publications périodiques
Nanotechnologies
Periodicals
620.5 - Journal URLs:
- http://www.iop.org/Journals/na ↗
http://iopscience.iop.org/0957-4484/ ↗
http://ioppublishing.org/ ↗ - DOI:
- 10.1088/1361-6528/abbfd3 ↗
- Languages:
- English
- ISSNs:
- 0957-4484
- Deposit Type:
- Legaldeposit
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- Available online (eLD content is only available in our Reading Rooms) ↗
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