Observation of single phonon-mediated quantum transport in a silicon single-electron CMOS single-atom transistor by RMS noise analysis. (18th November 2020)

• Record Type: Journal Article
• Authors: Bigoni, Stefano; Tagliaferri, Marco L. V.; Tamascelli, Dario; Strangio, Sebastiano; Bez, Roberto; Organtini, Paolo; Ferrari, Giorgio; Prati, Enrico
• Is Part Of: Applied physics express. Volume 13:Number 12(2020)
• Publication Date: 2020-11-18
• Subjects: single atom transistor -- electronic noise -- single phonon -- silicon quantum dot; Physics -- Periodicals; Technology -- Periodicals; 621.05
• DOI: 10.35848/1882-0786/abc7cf
• Languages: English
• ISSNs: 1882-0778

Abstract

Abstract: We explore phonon-mediated quantum transport through electronic noise characterization of a commercial CMOS transistor. The device behaves as a single electron transistor thanks to a single impurity atom in the channel. A low noise cryogenic CMOS transimpedance amplifier is exploited to perform low-frequency noise characterization down to the single electron, single donor and single phonon regime simultaneously, not otherwise visible through standard stability diagrams. Single electron tunneling as well as phonon-mediated features emerges in rms-noise measurements. Phonons are emitted at high frequency by generation-recombination phenomena by the impurity atom. The phonon decay is correlated to a Lorentzian 1/ f 2 noise at low frequency.