Influence of Electron–Phonon Interaction on the Lattice Thermal Conductivity in Single‐Crystal Si. Issue 11 (24th February 2020)

• Record Type: Journal Article
• Authors: Fang, Teng; Xin, Jiazhan; Fu, Chenguang; Li, Dongsheng; Zhao, Xinbing; Felser, Claudia; Zhu, Tiejun
• Other Names: Zhu Tiejun guestEditor.; Zhao Li‐Dong guestEditor.; Fu Chenguang guestEditor.
• Is Part Of: Annalen der Physik. Volume 532:Issue 11(2020)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2020-02-24
• Subjects: electron–phonon interaction -- lattice thermal conductivity -- n‐type single‐crystal Si -- thermoelectric materials; Physics -- Periodicals; Chemistry -- Periodicals; 530.05
• DOI: 10.1002/andp.201900435
• Languages: English
• ISSNs: 0003-3804

Abstract

Abstract: Lattice thermal conductivity can be reduced by introducing point defect, grain boundary, and nanoscale precipitates to scatter phonons of different wave‐lengths, etc. Recently, the effect of electron–phonon (EP) interaction on phonon transport has attracted more and more attention, especially in heavily doped semiconductors. Here the effect of EP interaction in n‐type P‐doped single‐crystal Si has been investigated. The lattice thermal conductivity decreases dramatically with increasing P doping. This reduction on lattice thermal conductivity cannot be explained solely considering point defect scattering. Further, the lattice thermal conductivity can be fitted well by introducing EP interaction into the modified Debye–Callaway model, which demonstrates that the EP interaction can play an important role in reducing lattice thermal conductivity of n‐type P‐doped single‐crystal Si. Abstract : The lattice thermal conductivity κ L of single‐crystal Si is strongly suppressed upon P‐doping due to the enhanced electron–phonon (EP) scattering. The modified Debye–Callaway model only fits the κ L for single‐crystal Si1‐ x P x well when the EP scattering is included, indicating the non‐negligible effect of EP scattering in reducing κ L for n‐type single‐crystal Si.