Lasing of InP/AlInAs quantum dots in AlInAs microdisk cavity. (February 2016)

• Record Type: Journal Article
• Authors: Lebedev, D V; Mintairov, A M; Kulagina, M M; Troshkov, S I; Kapaldo, J; Merz, J L; Rouvimov, S; Juska, G; Gocalinska, A; Moroni, S T; Pelucchi, E
• Is Part Of: Journal of physics. Volume 690(2016)
• Publication Date: 2016-02
• Subjects: Physics -- Congresses; 530.5
• DOI: 10.1088/1742-6596/690/1/012023
• Languages: English
• ISSNs: 1742-6588

Abstract

Abstract: AlInAs microdisk cavities having quality factor Q ∼ 15 000 were fabricated from lattice-matched InP/AlInAs (interface/aggregation) quantum dot (QD) structures using wet chemical etching. The QD emission coupled to whispering gallery modes was observed at spectral range 920 - 1000 nm at temperatures of 10 - 160 K. The laser generation with threshold power density of 50 W/cm 2 at T = 10 K was observed under optical pumping. It was found that the spontaneous emission coupling factor β equals 0.23 for these microdisks. The low temperature lasing operation and the small coupling factors observed suggest the existence of small QDs formed at the InP/InAlAs interface as the main active elements.