High output voltage of magnetic tunnel junctions with a Cu(In0.8Ga0.2)Se2 semiconducting barrier with a low resistance–area product. (28th December 2016)

• Record Type: Journal Article
• Authors: Mukaiyama, Koki; Kasai, Shinya; Takahashi, Yukiko K.; Kondou, Kouta; Otani, Yoshichika; Mitani, Seiji; Hono, Kazuhiro
• Is Part Of: Applied physics express. Volume 10:Number 1(2017)
• Publication Date: 2016-12-28
• Subjects: Physics -- Periodicals; Technology -- Periodicals; 621.05
• DOI: 10.7567/APEX.10.013008
• Languages: English
• ISSNs: 1882-0778

Abstract

Abstract: Magnetoresistance (MR) and its bias-voltage dependence were investigated in magnetic tunnel junctions (MTJs) with a 2-nm-thick Cu(In0.8 Ga0.2 )Se2 semiconducting barrier. A relatively high MR ratio of 47% was observed with a low resistance–area product RA of 0.14 Ω·µm 2 at 300 K. By increasing the bias voltage, a high output voltage (as high as 24 mV) was achieved; this value is significantly higher than those ever reported for MR devices with RA values less than 0.5 Ω·µm 2 . These MR performance characteristics of the MTJs with Cu(In0.8 Ga0.2 )Se2 are suitable for high-sensitivity read head sensors for hard disk drives with a recording density higher than 2 Tbit/in. 2 .