Dose Rate Considerations for Semiconductor Electronics: Why Current Variations Enable Unique GaN-based Transmission Electron Microscopy. (August 2020)

Record Type:: Journal Article
Title:: Dose Rate Considerations for Semiconductor Electronics: Why Current Variations Enable Unique GaN-based Transmission Electron Microscopy. (August 2020)
Main Title:: Dose Rate Considerations for Semiconductor Electronics: Why Current Variations Enable Unique GaN-based Transmission Electron Microscopy
Authors:: Specht, Petra
Kirste, Ronny
Sitar, Zlatko
Anderson, Travis
Koehler, Andrew
Kisielowski, Christian
Abstract:
Is Part Of:: Microscopy and microanalysis. Volume 26:(2020)Supplement 2
Journal:: Microscopy and microanalysis
Issue:: Volume 26:(2020)Supplement 2
Issue Display:: Volume 26, Issue 2 (2020)
Year:: 2020
Volume:: 26
Issue:: 2
Issue Sort Value:: 2020-0026-0002-0000
Page Start:: 3064
Page End:: 3066
Publication Date:: 2020-08
Subjects:: Microscopy -- Periodicals
Microchemistry -- Periodicals
502.82
Journal URLs:: https://academic.oup.com/mam ↗
http://journals.cambridge.org/action/displayJournal?jid=MAM ↗
http://link.springer.de/link/service/journals/10005/index.htm ↗
http://firstsearch.oclc.org ↗
DOI:: 10.1017/S1431927620023703 ↗
Languages:: English
ISSNs:: 1431-9276
Deposit Type:: Legaldeposit
View Content:: Available online (eLD content is only available in our Reading Rooms) ↗
Physical Locations:: British Library HMNTS - ELD Digital store
Ingest File:: 14979.xml