Hard X‐ray photoelectron spectroscopy study of core level shifts at buried GaP/Si(001) interfaces. (30th June 2020)

• Record Type: Journal Article
• Authors: Romanyuk, Oleksandr; Supplie, Oliver; Paszuk, Agnieszka; Stoeckmann, Jan Philipp; Wilks, Regan George; Bombsch, Jakob; Hartmann, Claudia; Garcia‐Diez, Raul; Ueda, Shigenori; Bartoš, Igor; Gordeev, Ivan; Houdkova, Jana; Kleinschmidt, Peter; Bär, Marcus; Jiříček, Petr; Hannappel, Thomas
• Other Names: Oswald Steffen guestEditor.; Watts John F. guestEditor.; Abel Marie‐Laure guestEditor.
• Is Part Of: Surface and interface analysis. Volume 52:Number 12(2020)
• Page Start: 933
• Page End: 938
• Publication Date: 2020-06-30
• Subjects: buried interfaces -- GaP/Si -- HAXPES -- interface chemical states; Surfaces (Physics) -- Periodicals; Surface chemistry -- Periodicals; Thin films -- Periodicals; 541.33
• DOI: 10.1002/sia.6829
• Languages: English
• ISSNs: 0142-2421

Abstract

Abstract : We present a study of buried GaP/Si(001) heterointerfaces by hard X‐ray photoelectron spectroscopy. Well‐defined thin (4–50 nm) GaP films were grown on Si(001) substrates with 2° miscut orientations by metalorganic vapor phase epitaxy. Core level photoelectron intensities and valence band spectra were measured on heterostructures as well as on the corresponding reference (bulk) substrates. Detailed analysis of core level peaks revealed line broadening and energetic shifts. Valence band offsets were derived for the films with different thickness. Based on the observed variation of the valence band offsets with the GaP film thickness and on the experimental evidence of line broadening, the existence of charge displacement at the GaP/Si(001) interface is suggested.