High energy Au+ ion implantation of polar and nonpolar ZnO—Structure modification and optical properties. (28th April 2020)

• Record Type: Journal Article
• Authors: Jagerová, Adéla; Malinský, Petr; Mikšová, Romana; Nekvindová, Pavla; Cajzl, Jakub; Ryšánek, Petr; Macková, Anna
• Other Names: Oswald Steffen guestEditor.; Watts John F. guestEditor.; Abel Marie‐Laure guestEditor.
• Is Part Of: Surface and interface analysis. Volume 52:Number 12(2020)
• Page Start: 1083
• Page End: 1088
• Publication Date: 2020-04-28
• Subjects: defects -- luminescence -- polar and nonpolar ZnO -- ZnO implantation; Surfaces (Physics) -- Periodicals; Surface chemistry -- Periodicals; Thin films -- Periodicals; 541.33
• DOI: 10.1002/sia.6789
• Languages: English
• ISSNs: 0142-2421

Abstract

Abstract : The paper presents a study of 5‐MeV energy Au + ion implantation in polar c ‐plane (0001), nonpolar a ‐plane (11‐20) and m ‐plane (10–10) ZnO crystallographic cuts using fluences of 5 × 10 14 and 1 × 10 15 cm −2 . The implanted samples were subsequently annealed in O2 atmosphere at 600°C. It was shown that a ‐plane ZnO exhibited a lowest level of Zn sublattice disorder evidenced by Rutherford backscattering spectroscopy in channelling mode (RBS‐C); in contrast, m ‐plane ZnO showed the highest disorder. The disorder in the Zn sublattice grew progressively in the subsurface as well as in the implanted layer in c ‐plane and m ‐plane ZnO, while a ‐plane has shown slight increase of disorder just in the implanted layer. Angular scans provided using RBS‐C have shown the preservation of channelling effect in the subsurface layer in a ‐plane ZnO. On the contrary, the narrowed and shallow angular scan dips were seen in m ‐plane ZnO. Raman spectroscopy has shown significant O‐sublattice disorder and O rearrangement mainly in a ‐plane and m ‐plane ZnO compared to c ‐plane. After ion implantation, the exciton‐related luminescence band at 375 nm vanished almost completely, and the defect‐related band 'shifted' to shorter wavelengths. Annealing has beneficial influence on near‐band‐edge (NBE) luminescence recovery, whereas deep‐level‐emission (DLE) luminesce has been shifted to lower wavelengths than appeared after implantation.