Electrical stability enhancement of GeInGaO thin-film transistors by solution-processed Li-doped yttrium oxide passivation. (15th June 2016)

• Record Type: Journal Article
• Authors: Choi, U H; Yoon, S; Yoon, D H; Tak, Y J; Kim, Y-G; Ahn, B D; Park, J; Kim, H J
• Is Part Of: Journal of physics. Volume 49:Number 28(2016)
• Publication Date: 2016-06-15
• Subjects: GeInGaO -- passivation layer -- thin-film transistor -- diffusion -- oxygen vacancy; Physics -- Periodicals; 530
• DOI: 10.1088/0022-3727/49/28/285103
• Languages: English
• ISSNs: 0022-3727

Abstract

Abstract: In this study, we investigated a method of enhancing the electrical stability of GeInGaO thin-film transistors (TFTs) using a Li-doped Y2 O3 (YO) passivation layer (PVL). Li reduced metal hydroxide groups in the PVL, and diffused into the channel layer and reduced the oxygen vacancy at the top surface of the channel layer, which is the origin of the defect state and electrical instability. In addition, the negative-bias temperature stress (NBTS) for 3600 s improved for Li-doped YO (LYO) PVL. The threshold voltage shift decreased from −10.3 V for the YO PVL to −4.8 V for the LYO PVL, a 54% improvement.