Morphology, structure, and properties of Cu-poor and Cu-rich Cu(In, Ga)Se2 films partially selenized using H2Se gas. (30th September 2016)

• Record Type: Journal Article
• Authors: Han, Anjun; Huang, Yongliang; Liu, Xiaohui; Xian, Wang; Meng, Fanying; Liu, Zhengxin
• Is Part Of: Japanese journal of applied physics. Volume 55:Number 11(2016:Nov.)
• Publication Date: 2016-09-30
• Subjects: Physics -- Periodicals; 621.05
• DOI: 10.7567/JJAP.55.115502
• Languages: English
• ISSNs: 0021-4922

Abstract

Abstract: Cu-poor and Cu-rich metallic precursors were prepared by cosputtering from In and Cu–Ga alloy targets and then partially selenized using H2 Se gas. The properties of Cu(In, Ga)Se2 (CIGS) films are comparatively studied and the phase transition process is analyzed. The cosputtered metallic precursor has a rough morphology mostly covered by large In-rich nodules. After selenization, a large number of crumblike InSe grains were formed from the nodules on the surface of the Cu-rich film, whereas the Cu-poor film shows a dense surface. The selenized films comprise CIGS, Cu9 (In, Ga)4 intermetallic, and the InSe phases. The proportion of the Cu9 (In, Ga)4 phase in the Cu-rich film is more than that in the Cu-poor film. After annealing, the residual Cu9 (In, Ga)4 of the Cu-poor film is eliminated. A negligible effect of Cu/(In+Ga) on the grain size can be observed. The CIGS solar cell with an efficiency of 15.1% was prepared by this method.