A 0.1 G-to-20 G integrated MEMS inertial sensor. (7th July 2015)

• Record Type: Journal Article
• Authors: Yamane, Daisuke; Konishi, Toshifumi; Matsushima, Takaaki; Toshiyoshi, Hiroshi; Masu, Kazuya; Machida, Katsuyuki
• Is Part Of: Japanese journal of applied physics. Volume 54:Number 8(2015:Aug.)
• Publication Date: 2015-07-07
• Subjects: Physics -- Periodicals; 621.05
• DOI: 10.7567/JJAP.54.087202
• Languages: English
• ISSNs: 0021-4922

Abstract

Abstract: This paper presents a novel integrated MEMS inertial sensor with a wide range of acceleration from 0.1 G to 20 G (G = 9.8 m/s 2 ) and with a design suitable for CMOS integration. Owing to the high-density of post-processed gold and the multi-metal layer technology, we have implemented different types of single-axis MEMS capacitive inertial sensors on a single chip of 4 × 4 mm 2 in area to obtain a wide sensing range. The estimated Brownian noise was between 82.4 nG/Hz 1/2 and 1.11 µG/Hz 1/2 . The experimental results show that the MEMS sensor has higher sensing resolution than those of conventional MEMS accelerometers.