InGaN light-emitting diodes with embedded nanoporous GaN distributed Bragg reflectors. (8th July 2015)

• Record Type: Journal Article
• Authors: Shieh, Bing-Cheng; Jhang, Yuan-Chang; Huang, Kun-Pin; Huang, Wan-Chun; Dai, Jing-Jie; Lai, Chun-Feng; Lin, Chia-Feng
• Is Part Of: Applied physics express. Volume 8:Number 8(2015:Aug.)
• Publication Date: 2015-07-08
• Subjects: Physics -- Periodicals; Technology -- Periodicals; 621.05
• DOI: 10.7567/APEX.8.082101
• Languages: English
• ISSNs: 1882-0778

Abstract

Abstract: InGaN-based light-emitting diodes (LEDs) with embedded conductive nanoporous GaN/undoped GaN (NP-GaN/u-GaN) distributed Bragg reflectors (DBRs) were demonstrated. Nanoporous GaN DBR structures were fabricated by pulsed 355 nm laser scribing and electrochemical etching processes. Heavily Si-doped n-type GaN:Si layers (n + -GaN) in an eight-period n + -GaN/u-GaN stack structure were transformed into a low-refractive-index, conductive nanoporous GaN structure. The measured center wavelength, peak reflectivity, and bandwidth of the nanoporous GaN DBR structure were 417 nm, 96.7%, and 34 nm, respectively. Resonance cavity modes of the photoluminescence spectra were observed in the treated LED structure with the nanoporous DBR structure.