Nonvolatile bipolar resistive switching behavior of epitaxial NdFeO3–PbTiO3 thin films grown on Nb:SrTiO3(001) substrate. (30th April 2015)

• Record Type: Journal Article
• Authors: Gao, Cunxu; Zhang, Peng; Xu, Benhua; Chen, Zhendong; Qi, Lin; Zhang, Chao; Dong, Chunhui; Jiang, Changjun; Liu, Qingfang; Xue, Desheng
• Is Part Of: Applied physics express. Volume 8:Number 5(2015:May)
• Publication Date: 2015-04-30
• Subjects: Physics -- Periodicals; Technology -- Periodicals; 621.05
• DOI: 10.7567/APEX.8.051102
• Languages: English
• ISSNs: 1882-0778

Abstract

Abstract: Epitaxial NdFeO3 –PbTiO3 (NFPTO) thin films were fabricated on Nb–SrTiO3 (100) (NSTO) substrates of about 300 nm thickness by a sol–gel process. Nonvolatile bipolar resistive switching has been observed in the Pt/NFPTO/NSTO structure. The resistance ratio between the high-resistance state and the low-resistance state is about one order of magnitude. After degenerating for several minutes, each memory state is stably maintained and no further degradation occurs over 15000 s. X-ray photoelectron spectroscopy results suggest that the oxygen vacancies acting as trapping centers in the films play a significant role in the resistive switching mechanisms. Analysis of the current–voltage relationship demonstrates that the trap-controlled space-charge-limited current mechanism is of considerable importance to the resistance switching.