Improved performance of GaAs tunnel diode by embedding InAs quantum dot layer for tandem solar cells. (29th May 2015)

• Record Type: Journal Article
• Authors: Park, Kwang Wook; Kang, Seok Jin; Ravindran, Sooraj; Min, Jung Wook; Lee, Soo Kyung; Park, Min Su; Lee, Yong Tak
• Is Part Of: Applied physics express. Volume 8:Number 6(2015:Jun.)
• Publication Date: 2015-05-29
• Subjects: Physics -- Periodicals; Technology -- Periodicals; 621.05
• DOI: 10.7567/APEX.8.062302
• Languages: English
• ISSNs: 1882-0778

Abstract

Abstract: GaAs tunnel diodes (TDs) embedded with an InAs quantum dot (QD) layer were grown and their performance was compared with that of TDs without a QD layer. The TDs embedded with a QD layer showed enhanced peak tunnel current density and lower differential resistivity at zero bias compared with the TDs without a QD layer. The samples were then annealed to mimic the overlayer growth process. It was found that the performance degradation after annealing was smaller for the QD-layer-embedded TDs. The improved characteristics of the QD-layer-embedded GaAs TDs make them advantageous for interconnecting unit cells in tandem solar cells.