Cite
HARVARD Citation
Huang, W. et al. (2017). Enabling n-type polycrystalline Ge junctionless FinFET of low thermal budget by in situ doping of channel and visible pulsed laser annealing. Applied physics express. p. . [Online].
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Huang, W. et al. (2017). Enabling n-type polycrystalline Ge junctionless FinFET of low thermal budget by in situ doping of channel and visible pulsed laser annealing. Applied physics express. p. . [Online].