Electron channel mobility in silicon-doped Ga2O3 MOSFETs with a resistive buffer layer. (31st October 2016)

• Record Type: Journal Article
• Authors: Wong, Man Hoi; Sasaki, Kohei; Kuramata, Akito; Yamakoshi, Shigenobu; Higashiwaki, Masataka
• Is Part Of: Japanese journal of applied physics. Volume 55:Number 12(2016:Dec.)
• Publication Date: 2016-10-31
• Subjects: Physics -- Periodicals; 621.05
• DOI: 10.7567/JJAP.55.1202B9
• Languages: English
• ISSNs: 0021-4922

Abstract

Abstract: The electron mobility in depletion-mode lateral β-Ga2 O3 (010) metal–oxide–semiconductor field-effect transistors (MOSFETs) with an n-channel formed by Si-ion (Si + ) implantation doping was extracted using low-field electrical measurements on FET structures. An undoped Ga2 O3 buffer layer protected the channel against charge compensation by suppressing outdiffusion of deep Fe acceptors from the semi-insulating substrate. The molecular beam epitaxy growth temperature was identified as a key process parameter for eliminating parasitic conduction at the buffer/substrate growth interface. Devices with a resistive buffer showed room temperature channel mobilities of 90–100 cm 2 V −1 s −1 at carrier concentrations of low- to mid-10 17 cm −3, with small in-plane mobility anisotropy of 10–15% ascribable to anisotropic carrier scattering.