Enhanced photoresponsivity of InSe photodetector by molecular doping. (29th October 2020)

• Record Type: Journal Article
• Authors: Xu, Chunyan; Zhang, Haozhe; Li, Daqing; Ostrikov, Kostya (Ken); Xiao, Shaoqing; Gu, Xiaofeng; Nan, Haiyan
• Is Part Of: Applied physics express. Volume 13:Number 11(2020)
• Publication Date: 2020-10-29
• Subjects: InSe -- h-BN -- F4-TCNQ doping -- photodetector -- responsivity; Physics -- Periodicals; Technology -- Periodicals; 621.05
• DOI: 10.35848/1882-0786/abc291
• Languages: English
• ISSNs: 1882-0778

Abstract

Abstract: InSe has attracted significant attention because of its extraordinary properties. However, the responsivities of the devices are mainly focused in the visible range. Here, we report an InSe/hexagonal boron nitride ( h -BN)-based photodetector with high responsivity and a photoresponse from a 940 to 447 nm wide response range, which is mainly due to two main techniques: (i) h -BN insertion underneath the InSe channel, and (ii) tetrafluorotetracyanoquinodimethane p-doping treatment. The method described here presents a significant step toward the achievement of next-generation high-performance photodetectors based on two-dimensional nanomaterials.