Microstructure and electrical property of tantalum oxynitride thin films prepared using high-power impulse reactive magnetron sputtering. (28th October 2020)

• Record Type: Journal Article
• Authors: Lee, Ping-Yuan; Lin, Cheng-Xian; Lee, Ying-Chieh
• Is Part Of: Japanese journal of applied physics. Volume 59:Number 11(2020)
• Publication Date: 2020-10-28
• Subjects: TaN -- Resistivity -- Sputtering -- Thin Films; Physics -- Periodicals; 621.05
• DOI: 10.35848/1347-4065/abc0ae
• Languages: English
• ISSNs: 0021-4922

Abstract

Abstract: Ta-N thin films were prepared on glass and Al2 O3 substrates using high-power impulse reactive magnetron sputtering. A Ta target was used and sputtered using Ar/N2 two gasses mixture. The phase structures, microstructures and electrical properties of Ta-N thin film with different powers and annealing temperatures were investigated. The results showed that an amorphous structure existed in the as-deposited Ta-N films at 500 W, and some crystalline phases (TaN, Ta2 N and β -Ta) were observed in as-deposited films at 1500 W and 2500 W. The crystallization phase did not change when the annealing temperature ranged from room temperature up to 500 °C. When the sputtering power increased to 2500 W, TaN, Ta2 N and β -Ta crystalline phases coexisted in the as-deposited films. However, Ta-N films deposited at 2500 W and annealed at 500 °C in N2 exhibited resistivity of ∼460 μ Ω-cm with −93 ppm °C −1 temperature coefficient of resistance.