Alcohol‐Mediated Resistance‐Switching Behavior in Metal–Organic Framework‐Based Electronic Devices. Issue 31 (17th June 2016)

• Record Type: Journal Article
• Authors: Liu, Yaqing; Wang, Hong; Shi, Wenxiong; Zhang, Weina; Yu, Jiancan; Chandran, Bevita K.; Cui, Chenlong; Zhu, Bowen; Liu, Zhiyuan; Li, Bin; Xu, Cai; Xu, Zhiling; Li, Shuzhou; Huang, Wei; Huo, Fengwei; Chen, Xiaodong
• Is Part Of: Angewandte Chemie international edition. Volume 55:Issue 31(2016)
• Page Start: 8884
• Page End: 8888
• Publication Date: 2016-06-17
• Subjects: chemically mediated memory -- flexible devices -- metal–organic frameworks -- resistance switching -- supramolecular chemistry; Chemistry -- Periodicals; 540
• DOI: 10.1002/anie.201602499
• Languages: English
• ISSNs: 1433-7851

Abstract

Abstract: Metal‐organic frameworks (MOFs) have drawn increasing attentions as promising candidates for functional devices. Herein, we present MOF films in constructing memory devices with alcohol mediated resistance switching property, where the resistance state is controlled by applying alcohol vapors to achieve multilevel information storage. The ordered packing mode and the hydrogen bonding system of the guest molecules adsorbed in MOF crystals are shown to be the reason for the alcohol mediated electrical switching. This chemically mediated memory device can be a candidate in achieving environment‐responsive devices and exhibits potential applications in wearable information storage systems. Abstract : A MOF never forgets : Alcohol‐mediated memory devices with reliable resistance‐switching properties were realized in metal–organic framework (MOF) films. The memory behavior can be controlled by the intermolecular interactions among the guest molecules adsorbed in MOF crystals to achieve multilevel information storage.