Cite
HARVARD Citation
Huang, W. et al. (2020). Ultra-high drivability, high-mobility, low-voltage and high-integration intrinsically stretchable transistors. Nanoscale. 12 (46), pp. 23546-23555. [Online].
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Huang, W. et al. (2020). Ultra-high drivability, high-mobility, low-voltage and high-integration intrinsically stretchable transistors. Nanoscale. 12 (46), pp. 23546-23555. [Online].