Cite
HARVARD Citation
Ausserlechner, U. et al. (2020). Drift of the sensitive direction of Hall-effect devices in (1 0 0)-silicon caused by mechanical shear stress. Solid-state electronics. p. . [Online].
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Ausserlechner, U. et al. (2020). Drift of the sensitive direction of Hall-effect devices in (1 0 0)-silicon caused by mechanical shear stress. Solid-state electronics. p. . [Online].