Tin sulfide (SnS) thin-film solar cells deposited by organic chemical vapor sulfurization based on CdS and high transmittance Cd(S, O) n-type layers with the superstrate device structure. (December 2020)

• Record Type: Journal Article
• Authors: Ballipinar, Faruk
• Is Part Of: MRS communications. Volume 10:Number 4(2020)
• Page Start: 660
• Page End: 666
• Publication Date: 2020-12
• Subjects: Materials -- Periodicals; 620.11
• DOI: 10.1557/mrc.2020.78
• Languages: English
• ISSNs: 2159-6859

Abstract

Abstract : Abstract: In this work, RF-sputtered metallic tin (Sn) film was sulfurized through di-tert-butyl-disulfide vapor at 350 °C for 150, 180, 210, and 240 min. According to the Raman spectra analysis, 210 min was sufficient to form dominantly SnS film. X-ray diffraction and X-ray photoelectron spectroscopy (XPS) studies of SnS film were evaluated. The n-type window layers CdS and high transmittance Cd(S, O) were deposited by chemical bath deposition through two different baths without and with TX-100 surfactant, respectively. XPS analysis of CdS and Cd(S, O) films was carried out. SnS solar cells formed in the superstrate solar cell device configuration. The photovoltaic performances were evaluated.