Cite
HARVARD Citation
Takino, J. et al. (2019). Development of a 2-inch GaN wafer by using the oxide vapor phase epitaxy method. Japanese journal of applied physics. p. . [Online].
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Takino, J. et al. (2019). Development of a 2-inch GaN wafer by using the oxide vapor phase epitaxy method. Japanese journal of applied physics. p. . [Online].