Numerical Simulations and In Situ Optical Microscopy Connecting Flow Pattern, Crystallization, and Thin‐Film Properties for Organic Transistors with Superior Device‐to‐Device Uniformity. Issue 48 (20th October 2020)
- Record Type:
- Journal Article
- Title:
- Numerical Simulations and In Situ Optical Microscopy Connecting Flow Pattern, Crystallization, and Thin‐Film Properties for Organic Transistors with Superior Device‐to‐Device Uniformity. Issue 48 (20th October 2020)
- Main Title:
- Numerical Simulations and In Situ Optical Microscopy Connecting Flow Pattern, Crystallization, and Thin‐Film Properties for Organic Transistors with Superior Device‐to‐Device Uniformity
- Authors:
- Lee, Jeong‐Chan
Lee, Minho
Lee, Ho‐Jun
Ahn, Kwangguk
Nam, Jaewook
Park, Steve - Abstract:
- Abstract: Currently, due to the lack of precise control of flow behavior and the understanding of how it influences thin‐film crystallization, strict tuning of thin‐film properties during solution‐based coating is difficult. In this work, a continuous‐flow microfluidic‐channel‐based meniscus‐guided coating (CoMiC) is introduced, which is a system that enables manipulation of flow patterns and analysis connecting flow pattern, crystallization, and thin‐film properties. Continuous supply of a solution of an organic semiconductor with various flow patterns is generated using microfluidic channels. 3D numerical simulations and in situ microscopy allow the tracking of the flow pattern along its entire path (from within the microfluidic channel to near the liquid–solid boundary), and enable direct observation of thin‐film crystallization process. In particular, the generation of chaotic flow results in unprecedented device‐to‐device uniformity, with coefficient of variation (CV) of 7.3% and average mobility of 2.04 cm 2 V −1 s −1 in doped TIPS‐pentacene. Furthermore, CV and average mobility of 9.6% and 11.4 cm 2 V −1 s −1 are achieved, respectively, in a small molecule:polymer blend system. CoMiC can serve as a guideline for elucidating the relation between flow behavior, liquid‐to‐solid phase transition, and device performance, which has thus far been unknown. Abstract : A comprehensive analytical system that can manipulate and track low patterns along its entire path isAbstract: Currently, due to the lack of precise control of flow behavior and the understanding of how it influences thin‐film crystallization, strict tuning of thin‐film properties during solution‐based coating is difficult. In this work, a continuous‐flow microfluidic‐channel‐based meniscus‐guided coating (CoMiC) is introduced, which is a system that enables manipulation of flow patterns and analysis connecting flow pattern, crystallization, and thin‐film properties. Continuous supply of a solution of an organic semiconductor with various flow patterns is generated using microfluidic channels. 3D numerical simulations and in situ microscopy allow the tracking of the flow pattern along its entire path (from within the microfluidic channel to near the liquid–solid boundary), and enable direct observation of thin‐film crystallization process. In particular, the generation of chaotic flow results in unprecedented device‐to‐device uniformity, with coefficient of variation (CV) of 7.3% and average mobility of 2.04 cm 2 V −1 s −1 in doped TIPS‐pentacene. Furthermore, CV and average mobility of 9.6% and 11.4 cm 2 V −1 s −1 are achieved, respectively, in a small molecule:polymer blend system. CoMiC can serve as a guideline for elucidating the relation between flow behavior, liquid‐to‐solid phase transition, and device performance, which has thus far been unknown. Abstract : A comprehensive analytical system that can manipulate and track low patterns along its entire path is utilized, elucidating the correlation between flow pattern, crystallization process, and thin‐film properties. Under the chaotic advection, unprecedented device‐to‐device uniformity with the coefficient of variation (CV) in mobility of 7.3% with high average mobility of 2.04 cm 2 V –1 s –1 in doped TIPS‐pentacene is achieved. … (more)
- Is Part Of:
- Advanced materials. Volume 32:Issue 48(2020)
- Journal:
- Advanced materials
- Issue:
- Volume 32:Issue 48(2020)
- Issue Display:
- Volume 32, Issue 48 (2020)
- Year:
- 2020
- Volume:
- 32
- Issue:
- 48
- Issue Sort Value:
- 2020-0032-0048-0000
- Page Start:
- n/a
- Page End:
- n/a
- Publication Date:
- 2020-10-20
- Subjects:
- crystallization -- device uniformity -- flow patterns -- organic transistors -- thin films
Materials -- Periodicals
Chemical vapor deposition -- Periodicals
620.11 - Journal URLs:
- http://onlinelibrary.wiley.com/journal/10.1002/(ISSN)1521-4095 ↗
http://onlinelibrary.wiley.com/ ↗ - DOI:
- 10.1002/adma.202004864 ↗
- Languages:
- English
- ISSNs:
- 0935-9648
- Deposit Type:
- Legaldeposit
- View Content:
- Available online (eLD content is only available in our Reading Rooms) ↗
- Physical Locations:
- British Library DSC - 0696.897800
British Library DSC - BLDSS-3PM
British Library HMNTS - ELD Digital store - Ingest File:
- 14897.xml