Lattice marginal reconstruction-enabled high ambient-tolerance perovskite quantum dot phototransistors. Issue 45 (11th September 2020)
- Record Type:
- Journal Article
- Title:
- Lattice marginal reconstruction-enabled high ambient-tolerance perovskite quantum dot phototransistors. Issue 45 (11th September 2020)
- Main Title:
- Lattice marginal reconstruction-enabled high ambient-tolerance perovskite quantum dot phototransistors
- Authors:
- Zhan, Shijie
Fan, Xiang-Bing
Zhang, Jiangbin
Yang, Jiajie
Bang, Sang Yun
Han, Soo Deok
Shin, Dong-Wook
Lee, Sanghyo
Choi, Hyung Woo
Wang, Xiaozhi
Hou, Bo
Occhipinti, Luigi G.
Kim, Jong Min - Abstract:
- Abstract : Medium-solvent-treated oxide/perovskite quantum dot hybrid phototransistors exhibited enhanced photoresponsivity and ambient tolerance based on a surface reconstruction phenomenon on quantum dots, which suppressed penetration of water molecules. Abstract : Perovskite quantum dots (PeQDs) have been rapidly developed as photoactive materials in hybrid phototransistors because of their strong light absorption, broad bandgap customizability, and defect tolerance in charge-transport properties. The solvent treatment has been well recognized as a practical approach for improving the charge transport of PeQDs and the photoresponsivity of PeQD phototransistors. However, there is a lack of fundamental understanding of the origin of its impacts on the ambient stability of the material, as well as the operational lifetime of the phototransistor. In particular, the relationship between the surface ligand dissociation and the microstructural reconstruction has not been fully elucidated so far. Herein, we report that a simultaneous enhancement of the photoresponsivity and ambient tolerance for PeQD-based hybrid phototransistors can be realized via medium-polarity-solvent treatment on solid-state PeQDs. Our comprehensive optoelectronic characterization and electron microscopic study reveals that the crystal morphology, instead of the surface ligands, is the dominating factor that results in the stability enhancement of the PeQDs. This stability enhancement is associated with theAbstract : Medium-solvent-treated oxide/perovskite quantum dot hybrid phototransistors exhibited enhanced photoresponsivity and ambient tolerance based on a surface reconstruction phenomenon on quantum dots, which suppressed penetration of water molecules. Abstract : Perovskite quantum dots (PeQDs) have been rapidly developed as photoactive materials in hybrid phototransistors because of their strong light absorption, broad bandgap customizability, and defect tolerance in charge-transport properties. The solvent treatment has been well recognized as a practical approach for improving the charge transport of PeQDs and the photoresponsivity of PeQD phototransistors. However, there is a lack of fundamental understanding of the origin of its impacts on the ambient stability of the material, as well as the operational lifetime of the phototransistor. In particular, the relationship between the surface ligand dissociation and the microstructural reconstruction has not been fully elucidated so far. Herein, we report that a simultaneous enhancement of the photoresponsivity and ambient tolerance for PeQD-based hybrid phototransistors can be realized via medium-polarity-solvent treatment on solid-state PeQDs. Our comprehensive optoelectronic characterization and electron microscopic study reveals that the crystal morphology, instead of the surface ligands, is the dominating factor that results in the stability enhancement of the PeQDs. This stability enhancement is associated with the preservation of the optical property and quantum confinement. In addition, we unveil a marginal reconstruction process that occurred during solvent treatment, which opens up a new route for the facet-oriented attachment of PeQDs along the 〈220〉 zone axis to suppress the damage from water molecule penetration. Our study yields a new understanding of the solvent impact on the PeQD microstructure reconstruction, and suggests new routes for perovskite materials and corresponding device operational stability enhancement. … (more)
- Is Part Of:
- Journal of materials chemistry. Volume 8:Issue 45(2020)
- Journal:
- Journal of materials chemistry
- Issue:
- Volume 8:Issue 45(2020)
- Issue Display:
- Volume 8, Issue 45 (2020)
- Year:
- 2020
- Volume:
- 8
- Issue:
- 45
- Issue Sort Value:
- 2020-0008-0045-0000
- Page Start:
- 16001
- Page End:
- 16009
- Publication Date:
- 2020-09-11
- Subjects:
- Materials -- Periodicals
Chemistry, Analytic -- Periodicals
Optical materials -- Research -- Periodicals
Electronics -- Materials -- Research -- Periodicals
543.0284 - Journal URLs:
- http://pubs.rsc.org/en/journals/journalissues/tc# ↗
http://www.rsc.org/ ↗ - DOI:
- 10.1039/d0tc03838e ↗
- Languages:
- English
- ISSNs:
- 2050-7526
- Deposit Type:
- Legaldeposit
- View Content:
- Available online (eLD content is only available in our Reading Rooms) ↗
- Physical Locations:
- British Library DSC - 5012.205300
British Library DSC - BLDSS-3PM
British Library STI - ELD Digital store - Ingest File:
- 14863.xml