Investigating the effect of quantized confining energy on the quantum coulomb blockade phenomena in single-electron transistor. (December 2020)

• Record Type: Journal Article
• Authors: Moulhim, Ali; Tripathi, Brijesh; Kumar, Manoj
• Is Part Of: Solid state communications. Volume 322(2020)
• Publication Date: 2020-12
• Subjects: Quantum dot -- Tunnel junction -- Nano-device -- Single electron transistor; Solid state chemistry -- Periodicals; Solid state physics -- Periodicals; Chimie de l'état solide -- Périodiques; Physique de l'état solide -- Périodiques; 530.41
• DOI: 10.1016/j.ssc.2020.114078
• Languages: English
• ISSNs: 0038-1098

Abstract

Abstract: Metal single-electron transistor (SET) and semiconductor quantum dot (QD) are Coulomb blockade (CB) devices having applications in quantum and classical technologies. The quantized confined energy of the confining system increases when the size of this system decreases. This behavior affect transport of charge carrier through SET significantly. This paper presents the results of investigation on the effect of quantized confining energy on the operation conditions of the single-electron transistor, known as quantum Coulomb blockade phenomena. Moreover, modified mathematical description of operation conditions and the quantum Coulomb blockade region of SET has been presented. Highlights: New theoretical insights in to quantum Coulomb blockade with reference to SET. Conditions of achieving tunneling transport through QDs depend on their size. Addition charge energy required to charge QD increases when the radius of QD decreases. Smaller size of QDs provides a greater stability to SET for working under high temperature conditions.