Cite
HARVARD Citation
Canato, E. et al. (2020). OFF-state trapping phenomena in GaN HEMTs: Interplay between gate trapping, acceptor ionization and positive charge redistribution. Microelectronics and reliability. p. . [Online].
This is an interim version of our Electronic Legal Deposit Catalogue-eJournals and eBooks while we continue to recover from a cyber-attack.
Canato, E. et al. (2020). OFF-state trapping phenomena in GaN HEMTs: Interplay between gate trapping, acceptor ionization and positive charge redistribution. Microelectronics and reliability. p. . [Online].