Cite
HARVARD Citation
Nakayama, T. et al. (2020). Gate threshold voltage instability and on-resistance degradation under reverse current conduction stress on E-mode GaN-HEMTs. Microelectronics and reliability. p. . [Online].
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Nakayama, T. et al. (2020). Gate threshold voltage instability and on-resistance degradation under reverse current conduction stress on E-mode GaN-HEMTs. Microelectronics and reliability. p. . [Online].