Cite
HARVARD Citation
Nardo, A. et al. (2020). Non thermally-activated transients and buffer traps in GaN transistors with p-type gate: A new method for extracting the activation energy. Microelectronics and reliability. p. . [Online].
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Nardo, A. et al. (2020). Non thermally-activated transients and buffer traps in GaN transistors with p-type gate: A new method for extracting the activation energy. Microelectronics and reliability. p. . [Online].