Cite
HARVARD Citation
Tallarico, A. et al. (2020). Role of the AlGaN barrier on the long-term gate reliability of power HEMTs with p-GaN gate. Microelectronics and reliability. p. . [Online].
This is an interim version of our Electronic Legal Deposit Catalogue-eJournals and eBooks while we continue to recover from a cyber-attack.
Tallarico, A. et al. (2020). Role of the AlGaN barrier on the long-term gate reliability of power HEMTs with p-GaN gate. Microelectronics and reliability. p. . [Online].