IBIC analysis of SiC detectors developed for fusion applications. (December 2020)

• Record Type: Journal Article
• Authors: Jiménez-Ramos, M.C.; López, J. García; Osuna, A. García; Rodríguez-Ramos, M.; Barroso, A. Villalpando; Muñoz, M. García; Andrade, E.; Pellegrini, G.; Ugobono, S. Otero; Godignon, P.; Rafí, J.M.; Rius, G.
• Is Part Of: Radiation physics and chemistry. Volume 177(2020:Dec.)
• Publication Date: 2020-12
• Subjects: Radiation damage -- SiC detectors -- Ion beam induced charge -- Charge collection efficiency -- Minority carrier lifetime; Radiation chemistry -- Periodicals; Radiometry -- Periodicals; Radiation -- Periodicals; Chimie sous rayonnement -- Périodiques; 539.2
• DOI: 10.1016/j.radphyschem.2020.109100
• Languages: English
• ISSNs: 0969-806X

Abstract

Abstract: In this work, we consider a 4H-SiC detector as a plasma diagnostic system for the detection of fusion-born alpha particles in future nuclear fusion reactors. A nuclear microprobe was used to locally irradiate micrometer-sized regions of the detector with 3.5 MeV He ions to fluences from 5 × 10 9 to 5 × 10 11 cm -2 . Ion Beam Induced Charge (IBIC) microscopy was employed to study its degradation in Charge Collection Efficiency (CCE) and energy resolution after irradiation. At high reverse-bias voltages, both parameters remain practically unaffected for fluences up to 1 × 10 11 cm -2, while a significant deterioration of the spectroscopic performance was observed above 3 × 10 11 cm -2 . A theoretical drift-diffusion model, in combination with Shockley-Read-Hall recombination statistics, was used to obtain the holes lifetime from the fitting of the experimental CCE values measured at different reverse voltages. Holes lifetime was found to strongly decrease with increasing particle fluence, changing from 57 ns in pristine detectors to 0.2 ns after irradiation with a fluence of 1 × 10 11 cm -2 . Highlights: Radiation hardness of SiC diodes is studied for the detection of 3.5 MeV He ions. The CCE and energy resolution are not degraded for fluences up to 1 × 10 11 cm -2 . Degradation of the spectrometric properties is observed at fluences ≥ 3 × 10 11 cm 2 . Minority carrier lifetime strongly deteriorate with increasing particle fluence.