Cite
HARVARD Citation
Locati, J. et al. (2020). AC stress reliability study on a novel vertical MOS transistor for non-volatile memory technology. Microelectronics and reliability. p. . [Online].
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Locati, J. et al. (2020). AC stress reliability study on a novel vertical MOS transistor for non-volatile memory technology. Microelectronics and reliability. p. . [Online].