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HARVARD Citation
Sun, Z. et al. (2021). Effects of SiON/III-nitride interface properties on device performances of GaN-based power field-effect transistors. Journal of physics. p. . [Online].
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Sun, Z. et al. (2021). Effects of SiON/III-nitride interface properties on device performances of GaN-based power field-effect transistors. Journal of physics. p. . [Online].