Gate-first AlGaN/GaN HEMT technology for enhanced threshold voltage stability based on MOCVD-grown in situ SiNx. (15th October 2020)

• Record Type: Journal Article
• Authors: Cheng, Liang; Xu, Weizong; Pan, Danfeng; Liang, Huinan; Wang, Ronghua; Zhu, Youhua; Ren, Fangfang; Zhou, Dong; Ye, Jiandong; Chen, Dunjun; Zhang, Rong; Zheng, Youdou; Lu, Hai
• Is Part Of: Journal of physics. Volume 54:Number 1(2021)
• Publication Date: 2020-10-15
• Subjects: gate-first -- AlGaN/GaN MIS-HEMT -- in situ SiNx -- gate dielectric -- threshold voltage stability; Physics -- Periodicals; 530
• DOI: 10.1088/1361-6463/abb161
• Languages: English
• ISSNs: 0022-3727

Abstract

Abstract: In this work, gate-first technology was developed in an AlGaN/GaN high-electron-mobility transistor (HEMT) based on a high-quality in situ SiNx gate dielectric, targeting for high-stability power applications. The effect of the high-temperature annealing process on the Ni/SiNx gate stack was systematically investigated. Almost the same basic electrical performances were observed from gate-first and gate-last processed devices. Furthermore, the annealing-like effect on the gate-stack-located trap states was revealed in gate-first devices with obvious enhancement in threshold voltage stability, validating the high compatibility of the in situ SiNx technology with the gate-first GaN HEMT technology.