Interlayer Band‐to‐Band Tunneling and Negative Differential Resistance in van der Waals BP/InSe Field‐Effect Transistors. (16th February 2020)

• Record Type: Journal Article
• Authors: Lv, Quanshan; Yan, Faguang; Mori, Nobuya; Zhu, Wenkai; Hu, Ce; Kudrynskyi, Zakhar R.; Kovalyuk, Zakhar D.; Patanè, Amalia; Wang, Kaiyou
• Is Part Of: Advanced functional materials. Volume 30:Number 15(2020)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2020-02-16
• Subjects: band‐to‐band tunneling -- BP/InSe heterojunctions -- field‐effect transistors -- negative differential resistance; Materials -- Periodicals; Chemical vapor deposition -- Periodicals; 620.11
• DOI: 10.1002/adfm.201910713
• Languages: English
• ISSNs: 1616-301X

Abstract

Abstract: Atomically thin layers of van der Waals (vdW) crystals offer an ideal material platform to realize tunnel field‐effect transistors (TFETs) that exploit the tunneling of charge carriers across the forbidden gap of a vdW heterojunction. This type of device requires a precise energy band alignment of the different layers of the junction to optimize the tunnel current. Among 2D vdW materials, black phosphorus (BP) and indium selenide (InSe) have a Brillouin zone‐centered conduction and valence bands, and a type II band offset, both ideally suited for band‐to‐band tunneling. TFETs based on BP/InSe heterojunctions with diverse electrical transport characteristics are demonstrated: forward rectifying, Zener tunneling, and backward rectifying characteristics are realized in BP/InSe junctions with different thickness of the BP layer or by electrostatic gating of the junction. Electrostatic gating yields a large on/off current ratio of up to 10 8 and negative differential resistance at low applied voltages ( V ≈ 0.2 V). These findings illustrate versatile functionalities of TFETs based on BP and InSe, offering opportunities for applications of these 2D materials beyond the device architectures reported in the current literature. Abstract : A tunnel field‐effect transistor (TFET) based on a black phosphorus (BP)/indium selenide heterojunction is demonstrated with diverse electrical transport characteristics. Forward rectifying, Zener tunneling, and backward rectifying characteristics are realized in TFETs with different thickness of the BP layer or by electrostatic gating, offering opportunities for applications of these 2D materials in versatile functional devices.