Temperature‐dependent small signal performance of GaN‐on‐diamond HEMTs. (14th May 2019)

• Record Type: Journal Article
• Authors: Chen, Yongbo; Xu, Yuehang; Zhou, Jianjun; Kong, Yuechan; Chen, Tangsheng; Zhang, Yong; Yan, Bo; Xu, Ruimin
• Other Names: Xu Yuehang guestEditor.
• Is Part Of: International journal of numerical modelling. Volume 33:Number 3(2020)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2019-05-14
• Subjects: GaN‐on‐diamond -- high electron mobility transistor (HEMT) -- small signal parameters -- temperature dependence; Electric networks -- Mathematical models -- Periodicals; Electronics -- Mathematical models -- Periodicals; 621.3011
• DOI: 10.1002/jnm.2620
• Languages: English
• ISSNs: 0894-3370

Abstract

Abstract: This paper presents the temperature dependence of small signal performance of GaN‐on‐diamond high electron mobility transistors (HEMTs) at an ambient temperature range from 0°C to 125°C. The temperature influence on the parasitic resistances together with the intrinsic parameters is investigated, and the temperature coefficients of these parameters are extracted from measured data. For comparison, a GaN‐on‐SiC device is also investigated. These results are important for the development and application of the GaN‐on‐diamond HEMT technology.