Coexistence of Digital and Analog Resistive Switching Behaviours in Ag/CuAlO2/TiO2/p++-Si Memristor. (September 2020)

• Record Type: Journal Article
• Authors: Yi, Hai; Ilyas, Nasir; Li, Chunmei; Li, Dongyang; Jiang, Xiangdong; Li, Wei
• Is Part Of: Journal of physics. Volume 1637(2020)
• Publication Date: 2020-09
• Subjects: Physics -- Congresses; 530.5
• DOI: 10.1088/1742-6596/1637/1/012053
• Languages: English
• ISSNs: 1742-6588

Abstract

Abstract: The digital resistive switching is suitable for the applications of information storage and logical operation, while the analog resistive switching is required in the neuromorphic computing system. This paper reports the stressed bias voltage-dependent digital and analog resistive switching behaviours coexisted in Ag/CuAlO2 /TiO2 /p ++ -Si memristor devices. At high biased voltage, the device has demonstrated bipolar resistance switching functions with a resistance ratio over 10 4 and reliable durability. Moreover, in the low voltage sweeping region, the device showed potentiation and depression characteristics. It is suggested that the bipolar resistive switching may be due to the local migration of Ag and oxygen ions within the dielectric layers. This new memory structure with digital and analog resistive switching is expected to reduce to decrease the manufacturing complexity of the electronic circuit containing digital/analog memristors.