Carrier confinement effects observed in the normal-state electrical transport of electron-doped cuprate trilayers. (1st February 2019)

• Record Type: Journal Article
• Authors: Sacco, Chiara; Galdi, Alice; Romeo, Francesco; Coppola, Nunzia; Orgiani, Pasquale; Wei, Haofei I; Goodge, Berit H; Kourkoutis, Lena F; Shen, Kyle; Schlom, Darrell G; Maritato, Luigi
• Is Part Of: Journal of physics. Volume 52:Number 13(2019)
• Publication Date: 2019-02-01
• Subjects: interfaces -- molecular beam epitaxy -- quantum wells -- electron-doped cuprates -- oxides; Physics -- Periodicals; 530
• DOI: 10.1088/1361-6463/aaffb1
• Languages: English
• ISSNs: 0022-3727

Abstract

Abstract: SrCuO2 /Sr0.9 La0.1 CuO2 /SrCuO2 trilayers were grown by oxide-molecular beam epitaxy. The thicknesses of the top and bottom SrCuO2 layers were fixed, while the thickness of the infinite-layer electron-doped cuprate Sr0.9 La0.1 CuO2 central layer was systematically changed. Transmission electron microscopy, x-ray reflectivity and x-ray diffraction measurements were performed to assess the sample quality and the abruptness of the interfaces. Electrical transport measurements as a function of temperature and as a function of central layer thickness, confirm that the normal state properties of the trilayers are altered by the confinement of the charge carriers in the central layer.