Cite
HARVARD Citation
Lee, I. et al. (2019). Long-channel InAlAs/InGaAs/InAlAs single-quantum-well MISFETs with subthreshold swing of 61 mV/decade and effective mobility of 11 900 cm2 V−1 · s−1. Applied physics express. p. . [Online].
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Lee, I. et al. (2019). Long-channel InAlAs/InGaAs/InAlAs single-quantum-well MISFETs with subthreshold swing of 61 mV/decade and effective mobility of 11 900 cm2 V−1 · s−1. Applied physics express. p. . [Online].