Silicon acoustoelectronics with thin film lithium niobate. (23rd November 2018)

• Record Type: Journal Article
• Authors: Bhaskar, Umesh Kumar; Bhave, Sunil Ashok; Weinstein, Dana
• Is Part Of: Journal of physics. Volume 52:Number 5(2019)
• Publication Date: 2018-11-23
• Subjects: acoustoelectric -- acoustic wave -- piezoelectric -- semiconductor; Physics -- Periodicals; 530
• DOI: 10.1088/1361-6463/aaee59
• Languages: English
• ISSNs: 0022-3727

Abstract

Abstract: We report on the acoustoelectric (AE) interaction in heterogeneously integrated thin-film lithium niobate on standard resistivity and high resistivity silicon substrates (LNOSs). The monolithic LNOS platform delivers acoustic waves with a large electromechanical coupling coefficient ( K 2 ) and draws on standard metal-oxide semiconductor field effect techniques to maximise AE interaction by impedance matching the acoustic wave with the semiconductor carriers. Preliminary results are obtained on AE attenuation (4 dB cm −1 ) and AE gain (6 dB cm −1 ). With further improvement of the LN/Si interface, the LNOS platform can be expected to give rise to an era of non-reciprocal silicon acoustoelectronics.