Semi-transparent quaternary oxynitride photoanodes on GaN underlayers. Issue 86 (6th October 2020)

• Record Type: Journal Article
• Authors: Ma, Zili; Piętak, Karolina; Piątek, Jędrzej; Reed DeMoulpied, Justin; Rokicińska, Anna; Kuśtrowski, Piotr; Dronskowski, Richard; Zlotnik, Sebastian; Coridan, Robert H.; Slabon, Adam
• Is Part Of: Chemical communications. Volume 56:Issue 86(2020)
• Page Start: 13193
• Page End: 13196
• Publication Date: 2020-10-06
• Subjects: Chemistry -- Periodicals; 540
• DOI: 10.1039/d0cc04894a
• Languages: English
• ISSNs: 1359-7345

Abstract

Abstract : Beyond semi-transparent Ta3 N5 photoanodes: a generalized approach for manufacturing of semi-transparent quaternary metal oxynitride photoanodes aiming for wireless tandem photoelectrochemical water-splitting. Abstract : Conformal atomic layer deposition (ALD) technique is employed to make semi-transparent TaO x N y, providing the possibility to build semi-transparent oxy(nitride) heterojunction photoanodes on conductive substrates. A generalized approach was developed to manufacture semi-transparent quaternary metal oxynitrides on conductive substrates beyond semi-transparent binary Ta3 N5 photoanodes aiming for wireless tandem photoelectrochemical (PEC) cells.