Cite
HARVARD Citation
Gadani, K. et al. (2021). Defects induced resistive switching behavior in Ca doped YMnO3–based non–volatile memory devices through electronic excitations. Materials science in semiconductor processing. p. . [Online].
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Gadani, K. et al. (2021). Defects induced resistive switching behavior in Ca doped YMnO3–based non–volatile memory devices through electronic excitations. Materials science in semiconductor processing. p. . [Online].