Evaluation of a Commercial Off The Shelf CMOS Image Sensor for X-ray spectroscopy up to 24.9 keV. (December 2020)

• Record Type: Journal Article
• Authors: Pérez, Martín; Haro, Miguel Sofo; Lipovetzky, José; Cicuttin, Andres; Crespo, María Liz; Alcade Bessia, Fabricio; Gómez Berisso, Mariano; Blostein, Juan Jerónimo
• Is Part Of: Radiation physics and chemistry. Volume 177(2020:Dec.)
• Publication Date: 2020-12
• Subjects: CMOS -- Image sensors -- X-rays -- Spectroscopy; Radiation chemistry -- Periodicals; Radiometry -- Periodicals; Radiation -- Periodicals; Chimie sous rayonnement -- Périodiques; 539.2
• DOI: 10.1016/j.radphyschem.2020.109062
• Languages: English
• ISSNs: 0969-806X

Abstract

Abstract: We studied the X-ray spectroscopy capability and the detection efficiency of a low cost Commercial Off The Shelf CMOS Image Sensor (CIS) in the energy range from 6.4 to 24.9 keV using the fluorescence spectra emitted by FeNi, Cu, Zr, Pb, and Ag. The obtained results are compared with that obtained using a Silicon Drift Detector (SDD). We conclude that CIS is able to resolve fluorescence lines up to 17.7 keV but with a reduced detection efficiency. At lower energies, the energy resolution of the CIS is comparable to that obtained with the SDD. By the comparison of both detectors we also estimate the detection efficiency of the proposed method and the effective thickness of the CIS for all the measured X-ray lines. 2010 MSC: 00-01, 99-00. Highlights: The COTS CMOS image sensor (CIS) was able to resolve X-Ray lines up to 17.7 keV. At lower energies, the energy resolution of the CIS and SDD are comparable. The detection efficiency of CIS ranges from 5.5% at 6.4 keV to 0.12% at 17.7 keV. The effective thickness of the CIS for all the measured X-ray lines was estimated. COTS CMOS image sensors can be used to obtain multiespectral X-ray imaging.