Effects of Electric Field on Electronic and Optical Properties of SnSe: A First-Principle Study. Issue 211 (12th October 2020)

• Record Type: Journal Article
• Authors: Luo, Min; Yin, Haihong
• Is Part Of: Integrated ferroelectrics. Issue 211(2020)
• Page Start: 167
• Page End: 174
• Publication Date: 2020-10-12
• Subjects: SnSe -- electric field -- tunable gap -- optical -- DFT calculations; Ferroelectric devices -- Periodicals; Integrated circuits -- Periodicals; 537.244805
• DOI: 10.1080/10584587.2020.1803684
• Languages: English
• ISSNs: 1058-4587

Abstract

Abstract: Electric field (E-field) effects on electric and optical properties of α-, β- and δ-SnSe have been investigated. Under the E-field, a tunable band gap of δ-SnSe appears, ranging from 2.23 to 1.26 eV. The band gap of β-SnSe could be mildly regulated by the E-field, just from 2.32 to 2.01 eV. For α-SnSe, the E-field has little effect on its band gap. We further find that the Sn-p and Se-p states mainly contribute to the variations of the band structures. Moreover, due to the application of the E-field, the absorption strength of α-SnSe in visible light might be enhanced.